( DataSheet : com )
Freescale Semiconductor Technical Data
MRF1535T1 Rev.
7, 3/2005
RF Power Field Effect
Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 520 MHz.
The high gain and broadband performance of these devices make them ideal for large−signal, common source amplifier applications in 12.
5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.
5 Volts Output Power — 35 Watts Power Gain — 10.
0 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.
6 Vdc, 520 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedan...