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STP5NA80 STP5NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STP5NA80 STP5NA80FI
s s s s s s s
VDSS 800 V 800 V
R DS(on) 2.
4 Ω 2.
4 Ω
ID 4.
7 A 2.
8 A
TYPICAL RDS(on) = 1.
8 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220
3 1 2
3 1 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switchin...