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Part Number
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K4F641612E |
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Manufacturer
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Samsung semiconductor |
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Description
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(K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM |
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Published
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Apr 30, 2006 |
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Detailed Description
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( DataSheet : www.DataSheet4U.com )
Industrial Temperature K4F661612E, K4F641612E
4M x 16bit CMOS Dynamic RAM with Fast...
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Datasheet
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K4F641612E
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Overview
( DataSheet : www.
DataSheet4U.
com )
Industrial Temperature K4F661612E, K4F641612E
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs.
Fast Page Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -50 or -60), power consumption(Normal or Low pow er) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize...
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