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Part Number
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FLL300IL-3 |
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Manufacturer
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Fujitsu Microelectronics |
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Description
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(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
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Published
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May 23, 2006 |
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Detailed Description
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com
FLL300IL-1, FLL300IL-2, FLL300IL-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Outp...
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Datasheet
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FLL300IL-3
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Overview
com
FLL300IL-1, FLL300IL-2, FLL300IL-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 44.
5dBm (Typ.
) High Gain: G1dB = 12.
0dB (Typ.
)@1.
8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.
) Proven Reliability Hermetically Sealed Package
DESCRIPTION
The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.
The performance in multitone environments for Class AB operation make them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability an...
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