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SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF148/D
The RF MOSFET Line
RF Power Field-Effect
Transistor
N–Channel Enhancement–Mode
Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
• Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Power Gain = 18 dB (Typ) Efficiency = 40% (Typ) • IMD(d3) (30 W PEP) — – 35 dB (Typ) • IMD(d11) (30 W PEP) — – 60 dB (Typ) • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Lower Reverse Transfer Capacitance (3.
0 pF Typical)
D
MRF148A
30 W, to 175 MHz N–CHANNEL MOS LINEAR RF POWER FET
G S CASE 211–07, STYLE 2
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