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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
,LTD
SOT-23 Plastic-Encapsulate
Transistors
SOT¡ª 23
S9013LT1
FEATURES
1.
BASE
TRANSISTOR£¨
NPN £©
2.
EMITTER 3.
COLLECTOR
Power dissipation PCM : 0.
3 W£¨ Tamb=25¡æ£© Collector current ICM : 0.
5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150 ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ otherwise specified£©
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) DC current gai...