TC55B329J Datasheet

TC55B329J 32K x 9-Bit BiCMOS Static RAM

The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B329P/J features low power dissipation when the device.

Features

low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible. The TC55B329P/J is available in a 300mil width, 32-pin DIP and SOJ suitable for high density surface assembly. Features
• Fast access time - TC55B329P/J-10 10ns (max.) - TC55B329P/J-12 12ns (max.)
• Low power dissipation - Operation: - TC55B329P/J-10 170mA (max.) - TC55B329P/J-12 170mA (max.) - Stan.