2SK2225
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching
regulator, DC-DC converter
Outline
TO-3PFM
ADE-208-140 1st.
Edition
D
G
1
2
3
1.
Gate
2.
Drain
3.
Source S
2SK2225
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 %
2.
Value at Tc = 25 °C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings
Unit
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