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Power
Transistors
2SC3874
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
20.
0±0.
5
Unit: mm
φ 3.
3±0.
2 5.
0±0.
3 3.
0
6.
0
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C)
Ratings 500 500 400 7 25 15 5 Unit V V V V A A A
26.
0±0.
5
10.
0
1.
5
2.
0
4.
0
1.
5
20.
0±0.
5 2.
5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction ...