STP55NE06L STP55NE06LFP
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE STP55NE06L STP55NE06LF P
s s s s s s
V DSS 60 V 60 V
R DS(on) 0.
022 Ω 0.
022 Ω
ID 55 A 28 A
TYPICAL RDS(on) = 0.
018 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION
1
2
3
1 2
3
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure.
The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps theref...