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STB50NE08
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE ST B50NE08
s s s s s
V DSS 80 V
R DS(on) 0.
024 Ω
ID 50 A
s
TYPICAL RDS(on) = 0.
020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.
The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics INTERNAL SCHEMATIC DIAGRAM and less critical alignment steps therefore a DataSheet4U.
com remarkabl...