Part Number
|
STB5NB60 |
Manufacturer
|
ST Microelectronics |
Description
|
N-CHANNEL POWER MOSFET |
Published
|
Jul 15, 2006 |
Detailed Description
|
com
®
STB5NB60
N - CHANNEL 600V - 1.8Ω - 5A - I2PAK/D2PAK PowerMESH™ MOSFET
TYPE ST B5NB60
s s s s s
...
|
Datasheet
|
STB5NB60
|
Overview
com
®
STB5NB60
N - CHANNEL 600V - 1.
8Ω - 5A - I2PAK/D2PAK PowerMESH™ MOSFET
TYPE ST B5NB60
s s s s s
V DSS 600 V
R DS(on) 2.
0 Ω
ID 5 A
TYPICAL RDS(on) = 1.
8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 12
3 1
DESCRIPTION Using the latest high voltage MESH OVERLAY™ I2PAK D2PAK process, STMicroelectronics has designed an TO-262 TO-263 advanced family of power MOSFETs with (Suffix ”T4”) (suffix ”-1”) outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabili...
Similar Datasheet