com
NEC's
NPN SILICON HIGH FREQUENCY
TRANSISTOR
FEATURES
• • • HIGH GAIN BANDWIDTH: fT = 21 GHz LOW NOISE FIGURE: NF = 1.
1 dB at 2 GHz HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz
2
NE66719
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 19
1.
6±0.
1 0.
8±0.
1
1.
6±0.
1
1.
0
0.
2
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer process.
This device is ideal for oscillator or low noise amplifier applications at 2 GHz and above.
0.
5
3
1
0.
75±0.
05
0.
6
0 to 0.
1
0.
15 -0.
05
+0.
1
0.
3 -0
+0.
1
DESCRIPTION
0.
5
+0.
1 -0
UB
PIN CONNECTIONS 1.
Emitter 2.
Base DataSheet4U.
com3.
Collector
DataShee
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBE...