com PD - 95526 IRF1104S/LPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.
009Ω G S ID = 100A… Description Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET P...

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