2SD1911
GENERAL DESCRIPTION
Silicon Diffused Power
Transistor
Highvoltage,high-speed switching
npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
TO-3PFM
CONDITIONS VBE = 0V TYP
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
Tmb 25 IC = 4.
0A; IB = 0.
8A f = 16KHz IF = 4.
5A ICsat = 4.
0A; f = 16KHz
4.
5 1.
6
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