www.
DataSheet4U.
com GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES • HIGH POWER GAIN: 7 dB TYP at 12 GHz • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz • LG = 0.
8 µm, WG = 330 µm • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz • LOW COST PLASTIC PACKAGE 2 NE721S01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S01 2.
0 ± 0.
2 2.
1 J 3 0.
65 TYP.
1.
9 ± 0.
2 1.
6 4 DESCRIPTION The NE721S01 is a low cost 0.
8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications.
Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range.
The NE721S01 is fabricated with an epitaxial...

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