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H2N4403 Datasheet

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H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR

The H2N4403 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4401 • High Power Dissipation: 625mW at 25°C • High DC Current Gain: 100-300 at 150mA • High Breakdown Voltage: 40V Min. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage T.

Features


• Complementary to H2N4401
• High Power Dissipation: 625mW at 25°C
• High DC Current Gain: 100-300 at 150mA
• High Breakdown Voltage: 40V Min. TO-92 Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature .... -55 ~ +150 °C Junction Temperature ... +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) .

H2N4403 H2N4403 H2N4403

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