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Freescale Semiconductor Technical Data
Document Number: MRF9582NT1 Rev.
1, 7/2006
Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET
Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
• Typical CW RF Performance @ 849 MHz: VDD = 12.
5 Volts, IDQ = 300 mA, Pout = 38 dBm Power Gain — 10.
5 dB Drain Efficiency — 55% • Capable of Handling 10:1 VSWR, @ 12.
5 Vdc, 849 MHz, 38 dBm • RoHS Compliant • In Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel
MRF9582NT1
849 MHz, 38 dBm, 12.
5 V HIGH FREQUENCY POWER
TRANSISTOR LDMOS FET
3
2
1
4
CASE 449 - 02, STYLE 1 PLD - 1
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