HI-SINCERITY MICROELECTRONICS CORP.
Spec.
No.
: HE6218 Issued Date : 1992.
11.
25 Revised Date : 2004.
05.
03 Page No.
: 1/5 H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications.
Features • High Power: 850mW • High Current: 1A TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .
.
.
-55 ~ +150 °C Junction Temperature +150 °C Maximum • Maximum P...

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