HI-SINCERITY MICROELECTRONICS CORP.
H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE6616 Issued Date : 1993.
09.
24 Revised Date : 2006.
02.
20 Page No.
: 1/5 Description The H2N6718V is designed for general purpose medium power amplifier and switching.
Absolute Maximum Ratings TO-126ML • Maximum Temperatures Storage Temperature .
.
.
-55 ~ +150 °C Junction Temperature +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C).
.
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