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2SK1169, 2SK1170
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source
S
2SK1169, 2SK1170 www.
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Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1169 2SK1170 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
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