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Ordering number : ENN8357
2SA2168
2SA2168
Features
• •
PNP Epitaxial Planar Silicon
Transistor
High-Voltage Switching Applications
Adoption of MBIT process.
High breakdown voltage and large current capacity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings --180 --160 --6 --1.
5 --2.
5 1.
5 150 --55 to +150 Unit V V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff...