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Power
Transistors
2SA2140
Silicon
PNP epitaxial planar type
Unit: mm
3.
0±0.
5
For power amplification For TV VM circuit ■ Features
• Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package which can be installed to the heat sink with one screw.
15.
0±0.
5
9.
9±0.
3
4.
6±0.
2 2.
9±0.
2
φ 3.
2±0.
1
13.
7±0.
2 4.
2±0.
2 Solder Dip
1.
4±0.
2 1.
6±0.
2 0.
8±0.
1
2.
6±0.
1
0.
55±0.
15
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction tempe...