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MS2213
RF & MICROWAVE
TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS
Features
• • • • • • • • REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN.
WITH 7.
8 dB Gain
DESCRIPTION:
The MS2213 device is a high power Class C
transistor specifically designed for JTIDS pulsed output and driver applications.
The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VS...