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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-92S Plastic-Encapsulate
Transistors
TO- 92S
1.
SOURCE
K596
Si N-CHANNEL JUNCTION FET
FEATURES Power dissipation PCM: 0.
1W£¨ Tamb=25¡æ£© Gate Current I G: 10mA Drain current I D : 1mA Drain-Source voltage BVGDO: -20 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Gate-Drain breakdown Voltage Gate-Source cut-off Voltage Drain Current Forward Transfer Admittance Input Capacitance Symbol
2.
GATE 3.
DRAIN
123
unless
otherwise
specified£©
MIN -20 -0.
6 100 0.
4 1.
2 3.
5 -1.
5 800 TYP MAX UNIT V V ¦Ì A mS pF
Test
conditions
IG= -100¦Ì A BVG...