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Provisional Data Sheet No.
PD-9.
1433
REPETITIVE AVALANCHE AND dv/dt RATED
IRHNA9160
P-CHANNEL
HEXFET
®
TRANSISTOR
RAD HARD
-100Volt, 0.
087Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 rads (Si).
Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
No compensation in gate drive circuitry is required.
These devices are also capable of ...