Part Number
|
IRHNB4160 |
Manufacturer
|
International Rectifier |
Description
|
RADIATION HARDENED POWER MOSFET |
Published
|
Oct 15, 2006 |
Detailed Description
|
com
PD - 91795A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
Product Summary
Part Number IRHN...
|
Datasheet
|
IRHNB4160
|
Overview
com
PD - 91795A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
Product Summary
Part Number IRHNB7160 IRHNB3160 IRHNB4160 IRHNB8160 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.
040Ω 0.
040Ω 0.
040Ω 0.
040Ω HEXFET® ID 51A 51A 51A 51A
IRHNB7160 100V, N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
™ ®
SMD-3
International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gat...
Similar Datasheet