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IRHNJ3130

Part Number IRHNJ3130
Manufacturer International Rectifier
Description N-CHANNEL MOSFET
Published Oct 15, 2006
Detailed Description com PD - 93820 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Rad...
Datasheet IRHNJ3130




Overview
com PD - 93820 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.
5) Product Summary Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si) RDS(on) 0.
18Ω 0.
18Ω 0.
18Ω 0.
18Ω ID 14.
4A 14.
4A 14.
4A 14.
4A IRHNJ7130 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY ™ ® SMD-0.
5 International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination ...






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