Part Number
|
IRHNJ3130 |
Manufacturer
|
International Rectifier |
Description
|
N-CHANNEL MOSFET |
Published
|
Oct 15, 2006 |
Detailed Description
|
com
PD - 93820
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Rad...
|
Datasheet
|
IRHNJ3130
|
Overview
com
PD - 93820
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.
5)
Product Summary
Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si) RDS(on) 0.
18Ω 0.
18Ω 0.
18Ω 0.
18Ω ID 14.
4A 14.
4A 14.
4A 14.
4A
IRHNJ7130 100V, N-CHANNEL
RAD-Hard HEXFET MOSFET TECHNOLOGY
™ ®
SMD-0.
5
International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination ...
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