Part Number
|
IRHNJ57Z30 |
Manufacturer
|
International Rectifier |
Description
|
RADIATION HARDENED POWER MOSFET |
Published
|
Oct 15, 2006 |
Detailed Description
|
www.DataSheet4U.com
PD - 93751B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Ra...
|
Datasheet
|
IRHNJ57Z30
|
Overview
www.
DataSheet4U.
com
PD - 93751B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.
5)
Product Summary
Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 IRHNJ54Z30 300K Rads (Si) 600K Rads (Si) RDS(on) 0.
020Ω 0.
020Ω 0.
020Ω 0.
025Ω ID 22A* 22A* 22A* 22A*
IRHNJ57Z30 30V, N-CHANNEL
4 #
TECHNOLOGY
c
IRHNJ58Z30 1000K Rads (Si)
SMD-0.
5
International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such a...
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