Part Number
|
2SK2596 |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N-Channel MOSFET |
Published
|
Oct 18, 2006 |
Detailed Description
|
com
2SK2596
Silicon N-Channel MOS FET UHF Power Amplifier
REJ03G0207-0300 (Previous ADE-208-1367(Z)) Re...
|
Datasheet
|
2SK2596
|
Overview
com
2SK2596
Silicon N-Channel MOS FET UHF Power Amplifier
REJ03G0207-0300 (Previous ADE-208-1367(Z)) Rev.
3.
00 Feb.
14.
2005
Features
• High power output, High gain, High efficiency PG = 12.
2 dB, Pout = 30.
2 dBm, ηD = 45%min.
(f = 836.
5 MHz) • Compact package capable of surface mounting
Outline
PLZZ0004CA-A (Previous code : UPAK)
D 2 3 G 1 1.
Gate 2.
Source 3.
Drain 4.
Source 4 S
Note: Marking is “BX“.
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage tempe...
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