Part Number
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2SK2595 |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N-Channel MOSFET |
Published
|
Oct 18, 2006 |
Detailed Description
|
com
2SK2595
Silicon N-Channel MOS FET UHF Power Amplifier
REJ03G0206-0300 Rev.3.00 Aug.26.2004
Feature...
|
Datasheet
|
2SK2595
|
Overview
com
2SK2595
Silicon N-Channel MOS FET UHF Power Amplifier
REJ03G0206-0300 Rev.
3.
00 Aug.
26.
2004
Features
• High power output, High gain, High efficiency PG = 7.
8 dB, Pout = 5.
37 W, ηD = 50% min.
(f = 836.
5 MHz) • Compact package capable of surface mounting
Outline
RP8P D G 1
3 2 S
1.
Gate 2.
Source 3.
Drain
Note:
Marking is "AX".
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C Sym...
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