|
Part Number
|
EFA080A |
|
Manufacturer
|
Execelies |
|
Description
|
Low Distortion GaAs Power FET |
|
Published
|
Oct 18, 2006 |
|
Detailed Description
|
com
Excelics
DATA SHEET
• • • • • • +26.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 12GHz 0....
|
|
Datasheet
|
EFA080A
|
Overview
com
Excelics
DATA SHEET
• • • • • • +26.
0dBm TYPICAL OUTPUT POWER 10.
0dB TYPICAL POWER GAIN AT 12GHz 0.
3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 15mA PER BIN RANGE
50 D
EFA080A
Low Distortion GaAs Power FET
510 116
D
48
340 100 40 S G S G S
95
50
80
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% ...
Similar Datasheet