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PD -94273A
IRG4MC50U
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets
C
UltraFast Speed IGBT
VCES = 600V
G E
VCE(on) max = 2.
25V
@VGE = 15V, IC = 27A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar
Transistors (IGBTs) from International Rectifier have higher usabl...