www.
DataSheet4U.
com S outh S ea S emiconductor SSS ID -8A S S M4435 J ULY ,2004 V er1.
1 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 R DS (ON) S uper high dense cell design for low R DS (ON ).
20 @ V G S = -10V 35 @ V G S = -4.
5V R ugged and reliable.
S urface Mount P ackage.
D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID I...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)