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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET .
™ Power Field Effect
Transistor D 3 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high speed switching applications in power supplies, converters, PWM motor controls, these devices ...