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Part Number
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HL6313G |
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Manufacturer
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Hitachi Semiconductor |
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Description
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(HL6312G / HL6313G) AlGaInP Laser Diodes |
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Published
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Nov 6, 2006 |
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Detailed Description
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HL6312/13G
AlGaInP Laser Diodes
Description
The HL6312/13G are 0.63 µm band AlGaInP laser diodes w...
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Datasheet
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HL6313G
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Overview
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DataSheet4U.
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HL6312/13G
AlGaInP Laser Diodes
Description
The HL6312/13G are 0.
63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure.
Wavelength is equal to He-Ne Gas laser.
They are suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
Hermetic sealing of the package achieves high reliability.
Features
• • • • • Visible light output: λp = 635 nm Typ (nearly equal to He-Ne Gas Laser) Optical output power: 5 mW CW Low Operating voltage: 2.
7 V Max Single longitudinal mode Built-in photodiode for monitoring laser output
99
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HL6312/13G
Absolute Maximum Ratings (TC = 25°C)
Item Optical output ...
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