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MT3S35T
TOSHIBA
TRANSISTOR SILICON
NPN EPITAXIAL PLANER TYPE
MT3S35T
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
Unit: mm
FEATURES
· · Low Noise Figure :NF=1.
4dB (@f=2GHz) High Gain:|S21e| =13.
0dB (@f=2GHz)
2
Marking
3
Q2
1 2
TESM JEDEC ― ― 2-1B1A
Maximum Ratings (Ta = 25°C)
Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.
5 1.
5 24 12 100 150 −55~150 Unit V V V mA mA mW °C °C
JEITA TOSHIBA
Weight:0.
0022g (typ.
)
1
2002-08-19
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MT3S35T
Micr...