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Features
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PWM and Direction-controlled Driving of Four Externally-powered NMOS
Transistors High Temperature Capability up to 200° C Junction A Programmable Dead Time Is Included to Avoid Peak Currents Within the H-bridge Integrated Charge Pump to Provide Gate Voltages for High-side Drivers and to Supply the Gate of the External Battery Reverse Protection NMOS 5V/3.
3V
Regulator and Current Limitation Function Reset Derived From 5V/3.
3V
Regulator Output Voltage A Programmable Window Watchdog Battery Overvoltage Protection and Battery Undervoltage Management Overtemperature Warning and Protection (Shutdown) High Voltage Serial Interface for Communicatio...