www.
DataSheet4U.
com
SSW2N60B / SSI2N60B
November 2001
SSW2N60B / SSI2N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Features
• • • • • • 2.
0A, 600V, RDS(on) = 5.
0Ω @VGS = 10 V Low gate charge ( typical 12.
5 nC) Low Crss ( typical 7.
6 pF) Fast switching 100% avalanche tested Improved dv/...