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MA2YD33

Part Number MA2YD33
Manufacturer Panasonic Semiconductor
Description Silicon epitaxial planar type
Published Nov 22, 2006
Detailed Description com Schottky Barrier Diodes (SBD) MA2YD33 Silicon epitaxial planar type For high frequency rectificatio...
Datasheet MA2YD33




Overview
com Schottky Barrier Diodes (SBD) MA2YD33 Silicon epitaxial planar type For high frequency rectification  Features  Forward current (Average) IF(AV) = 500 mA rectification is possible  Small reverse current IR 1.
6±0.
1 1 0 to 0.
1 2.
6±0.
1 3.
5±0.
1 0.
80±0.
05 Unit: mm  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 500 3 125 –55 to +125 Unit V V mA °C °C 1: Anode 2: Cathode 5° 2 0.
55±0.
1 5° 0.
45±0.
1 0.
16+0.
1 –0.
06 Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak curr...






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