Part Number
|
AT12020-21 |
Manufacturer
|
Advanced Semiconductor |
Description
|
SILICON ABRUPT VARACTOR DIODE |
Published
|
Nov 27, 2006 |
Detailed Description
|
www.DataSheet4U.com
AT12020-21
SILICON ABRUPT VARACTOR DIODE
DESCRIPTION:
The AT12020-21 is Designed for High Perform...
|
Datasheet
|
AT12020-21
|
Overview
www.
DataSheet4U.
com
AT12020-21
SILICON ABRUPT VARACTOR DIODE
DESCRIPTION:
The AT12020-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.
FEATURES INCLUDE:
• High Tuning Ratio, ∆CT = 10 MIN.
• High Quality Factor, Q = 300 MIN.
• Hermetic Package, CP = .
20 pF LS = .
42 nH
PACKAGE STYLE 21
MAXIMUM RATINGS
IF VR PDISS TJ TSTG θJC
O O
200 mA 120 V 1.
75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W
O O O O
NONE
CHARACTERISTICS
SYMBOL
VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 mA VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL
120
MAXIM
1.
0 100
UNITS
V V µA pF -----
...
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