com AT12016-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12016-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.
PACKAGE STYLE 21 FEATURES INCLUDE: • High Quality Factor, Q = 300 MIN.
CP = .
20 pF • Hermetic Pkg, LS = .
42 nH • High Tuning Ratio, ∆CT = 9.
0 MIN.
MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.
75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W NONE O O O O CHARACTERISTICS SYMBOL VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 mA VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL 120 MAXIM 1.
0 100 UNITS V V µA pF ----- f = ...

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