Part Number
|
IXFA3N80 |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Nov 27, 2006 |
Detailed Description
|
com
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary...
|
Datasheet
|
IXFA3N80
|
Overview
com
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary data sheet
IXFA 3N80 IXFP 3N80
VDSS = 800 V ID25 = 3.
6 A RDS(on) = 3.
6 W trr £ 250 ns
Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ±20 ±30 3.
6 14.
4 3.
6 10 400 5 100 -55 to +150 150 -55 to +150 V V V V A A A mJ mJ V/ns W °C °C °C °C
TO-220 (IXFP)
D (TAB)
G DS
TO-263 (IXFA)
G
S
D ...
Similar Datasheet