Part Number
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SI6866BDQ |
Manufacturer
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Vishay Siliconix |
Description
|
Dual N-Channel MOSFET |
Published
|
Nov 27, 2006 |
Detailed Description
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com
SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
• N...
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Datasheet
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SI6866BDQ
|
Overview
com
SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.
5-V (G-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold vol...
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