TIM3742-8UL

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM3742-8UL „ HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=11.0dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point ...