Ordering number : ENN6558 5LN01N N-Channel Silicon MOSFET 5LN01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 5.
0 4.
0 Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
[5LN01N] 4.
0 0.
45 0.
5 0.
6 2.
0 5.
0 0.
45 0.
44 14.
0 1 2 3 1 : Source 2 : Drain 3 : Gate 1.
3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1.
3 SANYO : NP Ratings 50 ±10 0.
1 0.
4 0.
4 150 --55 to +150 Unit V V A A W °C °C Electri...

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