Ordering number : ENN6415 5LN02C N-Channel Silicon MOSFET 5LN02C Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2091A [5LN02C] 0.
5 0.
4 Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
0.
16 0 to 0.
1 3 1 0.
95 0.
95 2 1.
9 2.
9 0.
5 1.
5 2.
5 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Sourse Voltage Drain Current(DC) Drain Current(Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.
8 1.
1 Ratings 50 ±10 0.
2 0.
8 0.
25 150 -55 to +150 Unit V V A A W °C °C Electri...

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