Part Number
|
IRF7324PBF |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
Dec 4, 2006 |
Detailed Description
|
com
PD - 95460
IRF7324PbF
HEXFET® Power MOSFET
Trench Technology Ultra Low On-Resistance ● Dual P-Chan...
|
Datasheet
|
IRF7324PBF
|
Overview
com
PD - 95460
IRF7324PbF
HEXFET® Power MOSFET
Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile (1.
1mm) ● Available in Tape & Reel ● 2.
5V Rated ● Lead-Free
● ●
S1 G1 S2 G2
1 2 3 4
8 7
D1 D1 D2 D2
VDSS = -20V RDS(on) = 0.
018Ω
6 5
Description
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
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