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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRFG35003MT1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect
Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.
8 to 3.
6 GHz.
Device is unmatched and is suitable for use in Class AB linear base station applications.
• Typical W–CDMA Performance: –42 dBc ACPR, 3.
55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.
84 MHz BW, 64 DPCH (8.
5 dB P/A @ 0.
01% Probability) Output Power — 300 mWatt Power Gain — 11.
5 dB Efficiency — 25%
MRFG35003MT1
3.
5 GHz, 3 W, 12 V POWER FET GaAs PHEMT
Freescale Semiconductor, Inc.
.
.
• 3 Watts P1dB @ 3...