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Ordering number : ENN8105
SCH2812
SCH2812
Features
•
MOSFET : N-Channel Silicon MOSFET SBD :
Schottky Barrier Diode
General-Purpose Switching Device Applications
•
•
Composite type with a N-channel sillicon MOSFET (SCH1412) and a
Schottky barrier diode (SS05015SH) contained in one package facilitating high-density mounting.
[MOSFET] • Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
[SBD] • Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage ...